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Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

$ 22.00

4.5 (390) In stock

A Novel Resistive Switching Identification Method through

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered

Self-rectifying resistive memory in passive crossbar arrays

Picosecond multilevel resistive switching in tantalum oxide thin

Material insights of HfO2-based integrated 1-transistor-1-resistor

HfO2-Based RRAM with In Situ Conductive Channels Induced by

a) Reset process of the sub- 10 nm sharp tip-induced cell fitted

XPS depth profile of Al 2 O 3 /HfO 2 /Al 2 O 3 on TiN-coated Si by

Excellent resistive switching properties of atomic layer-deposited

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